蝕刻機的原理
Principle of etcher
感應耦合等離子體刻蝕法（InducTIvely CoupledPlasma Etch，簡稱ICPE）是化學過程和物理過程共同作用的結果。它的基本原理是在真空低氣壓下，ICP 射頻電源產生的射頻輸出到環形耦合線圈，以一定比例的混合刻蝕氣體經耦合輝光放電，產生高密度的等離子體，在下電極的RF 射頻作用下，這些等離子體對基片表面進行轟擊，基片圖形區域的半導體材料的化學鍵被打斷，與刻蝕氣體生成揮發性物質，以氣體形式脫離基片，然后從真空管路被抽走。
Inductively coupled plasma etch (ICPE) is the result of the interaction of chemical and physical processes. Its basic principle is that under vacuum and low pressure, the RF generated by ICP RF power supply is output to the ring coupling coil, and a certain proportion of mixed etching gas is discharged through coupling glow to generate high-density plasma. Under the RF action of the lower electrode, these plasmas bombard the substrate surface, the chemical bond of semiconductor materials in the substrate pattern area is broken, and volatile substances are generated with the etching gas, It is separated from the substrate in the form of gas and then pumped away from the vacuum line.
